Clock mode determination in a memory system

ABSTRACT

A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority of U.S. ProvisionalPatent Application Ser. No. 60/902,003 filed on Feb. 16, 2007, thecontents of which are incorporated herein by reference in theirentirety.

BACKGROUND

Flash memory is a commonly used type of non-volatile memory inwidespread use as mass storage for consumer electronics, such as digitalcameras and portable digital music players for example. The density of apresently available Flash memory component, consisting of 2 stackeddies, can be up to 32 Gbits (4 GB), which is suitable for use in popularUSB Flash drives, since the size of one Flash component is small.

The advent of 8 mega pixel digital cameras and portable digitalentertainment devices with music and video capabilities has spurreddemand for ultra-high capacities to store the large amounts of data,which cannot be met by the single Flash memory device. Therefore,multiple Flash memory devices are combined together into a memory systemto effectively increase the available storage capacity. For example,Flash storage densities of 20 GB may be required for such applications.

FIG. 1 is a block diagram of a prior art flash memory system 10integrated with a host system 12. Flash memory system 10 includes amemory controller 14 in communication with host system 12, and multiplenon-volatile memory devices 16. The host system 12 includes a processingdevice such as a microcontroller, microprocessor, or a computer system.The Flash memory system 10 of FIG. 1 is configured to include onechannel 18, where memory devices 16 are connected in parallel to channel18. Those skilled in the art will understand that the memory system 10can have more or less than four memory devices connected to it.

Channel 18 includes a set of common buses, which include data andcontrol lines that are connected to all its corresponding memorydevices. Each memory device is enabled/disabled with respective chipselect signals CE#1, CE#2, CE#3 and CE#4, provided by memory controller14. The “#” indicates that the signal is an active low logic levelsignal. The memory controller 14 is responsible for issuing commands anddata, via the channel 18, to a selected memory device based on theoperation of the host system 12. Data read from the memory devices istransferred via the channel 18 back to the memory controller 14 and hostsystem 12. Operation of flash memory system 10 can be asynchronous orsynchronous. FIG. 1 illustrates an example of a synchronous system thatuses a clock CLK, which is provided in parallel to each memory device16. Flash memory system 10 is generally referred to as a multi-dropconfiguration, in which the memory devices 16 are connected in parallelwith respect to channel 18.

In Flash memory system 10, non-volatile memory devices 16 may be (butnot necessarily) substantially identical to each other, and aretypically implemented as NAND flash memory devices. Those skilled in theart will understand that flash memory is organized into banks, and eachbank is organized into blocks to facilitate block erasure. Mostcommercially available NAND flash memory devices are configured to havetwo banks of memory.

There are specific issues that will adversely impact performance of thesystem. The configuration of Flash memory system 10 imposes physicalperformance limitations. With the large number of parallel signalsextending across the system, the signal integrity of the signals theycarry will be degraded by crosstalk, signal skew, and simultaneousswitching noise (SSN). Power consumption in such a configuration becomesan issue as each signal track between the flash controller and flashmemory devices is frequently charged and discharged for signaling. Withincreasing system clock frequencies, the power consumption willincrease.

There is also a practical limit to the number of memory devices whichcan be connected in parallel to the channel since the drive capabilityof a single memory device is small relative to the loading of the longsignal tracks. Furthermore, as the number of memory devices increase,more chip enable signals (CE#) are required, and the clock signal CLKwill need to be routed to the additional memory devices. Clockperformance issues due to extensive clock distribution are well known inthe art, which would need to be addressed. Therefore, in order toaccommodate a memory system having a large number of memory devices,either a controller having more channels must be used, or and/or thesystem will need to be clocked at a lower frequency. A controllerconfigured to have multiple channels and additional chip enable signalsincreases the cost of the memory system. Otherwise, the memory system islimited to a small number of memory devices.

Therefore, it is desirable to provide a memory system devicearchitecture capable of high speed operation while overcoming issuesassociated with the prior art memory system having memory devicesconnected in parallel to each other.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the clock mode circuits will now be described, by way ofexample only, with reference to the attached Figures, wherein:

FIG. 1 is a block diagram of a prior art Flash memory system;

FIG. 2A is a general block diagram of a serial memory system receiving aclock signal in parallel;

FIG. 2B is a general block diagram of a serial memory system receiving aclock signal serially;

FIG. 3A is a block diagram of a serial memory system receiving clocksignals serially, according to one embodiment;

FIG. 3B is a timing diagram showing the operation of the memory systemof FIG. 3A;

FIG. 3C is a block diagram of a serial memory system receiving clocksignals in parallel, according to another embodiment;

FIG. 3D is a timing diagram showing the operation of the memory systemof FIG. 3C;

FIG. 4 is a block diagram of a memory device having a native core and aserial input/output interface suitable for use in the serial memorysystems of FIGS. 3A and B;

FIG. 5 is a block diagram illustrating a configurable input circuitembodiment usable in the serial memory systems of FIGS. 3A and 3C;

FIG. 6 is a circuit schematic embodiment of the mode setter of FIG. 5;

FIG. 7 is a sequence diagram illustrating the operation of the modesetter of FIG. 6;

FIG. 8A is a schematic embodiment of the configurable input circuitshown in FIG. 5;

FIG. 8B is a timing diagram showing the operation of the circuits ofFIG. 8A;

FIG. 9 is a block diagram of an embodiment of a dynamically configurableserial memory system;

FIG. 10 is a schematic embodiment of an alternate clock switch circuitembodiment used in the memory devices shown in FIG. 9; and,

FIG. 11 is a flow chart of a method for configuring an clock operatingmode of a memory device.

DETAILED DESCRIPTION

In a first aspect, there is provided a semiconductor device forreceiving a clock and input data. The semiconductor device includes aconfigurable input circuit operable in a first mode for receivingcoincident edges of the clock and the input data, and for providingshifted clock edges positioned within a data valid window for samplingthe input data. The configurable input circuit is operable in a secondmode for receiving non-coincident edges of the clock and the input datafor sampling the input data. In an embodiment of the present aspect, thesemiconductor device further includes an input pin for providing avoltage to the configurable input circuit for setting the first mode andthe second mode. The input pin includes a reference voltage pin set toone of low and high power supply levels for setting the second mode, anda reference voltage level for setting the first mode. The referencevoltage level can be between the low and high power supply levels, andis used by the configurable input circuit to sense logic levels of theinput data.

In further embodiments of the present aspect, the configurable inputcircuit includes a single ended input buffer and a differential inputbuffer. The single ended input buffer is coupled to a data input pin forreceiving the input data, and is enabled in the second mode and disabledin the first mode. The differential input buffer is coupled to the datainput pin for receiving the input data, and is enabled in the first modefor sensing logic levels of the input data relative to the voltage.Alternately, the configurable input circuit includes a clock synthesizerfor providing the shifted clock edges in response to the clock. Theclock synthesizer includes one of a delay locked loop and a phase lockedloop, or the clock synthesizer can be disabled in the second mode.

In a second aspect, the present invention provides a configurable memorydevice. The configurable memory device includes a mode setter, a clockswitch, and a configurable data input/output buffer. The mode settersenses a voltage level of a reference voltage input port and provides amode selection signal corresponding to the sensed voltage level. Theclock switch is coupled to a clock input port for receiving at least oneof parallel complementary clock signals and serial complementary clocksignals. The clock switch generates complementary internal clock signalscorresponding to the parallel complementary clock signals in response toa first logic state of the mode selection signal, or the serialcomplementary clock signals in response to a second logic state of themode selection signal. The configurable data input/output buffer iscoupled to a data input port and the reference voltage input port forsensing data received on the data input port relative to the voltagelevel in response to the second logic state of the mode selectionsignal. In an embodiment of the present aspect, the mode setter includesa sense circuit and a latch. The sense circuit compares the voltagelevel to a preset reference voltage, and provides a sense outputcorresponding to the voltage level relative to the preset referencevoltage. The latch latches the sense output and provides the modeselection signal having one of the first logic state and the secondlogic state.

In the current embodiment, the sense circuit includes a referencevoltage circuit and a comparator. The reference voltage circuit providesthe preset reference voltage and the comparator provides the senseoutput in response to the voltage level and the preset referencevoltage. The reference voltage circuit includes a voltage dividercoupled between VDD and VSS, and a power shut-off device for cutting offcurrent through the voltage divider after a predetermined period oftime. The mode setter includes a delay circuit for turning off the powershut-off device after the predetermined period of time when a resetsignal is driven to an inactive logic state. The delay circuit includesan n-bit counter enabled when the reset signal is at the inactive logicstate for driving a most significant bit to an active logic state. Themost significant bit is driven to the active logic state when 2̂n activeedges of a clock signal are counted, where n is an integer value greaterthan 1, such that the delay circuit generates a disable signalcorresponding to the most significant bit being at the active logicstate for turning off the power shut-off device.

In yet another embodiment of the present aspect, the clock switchincludes a clock input buffer, a clock generator and a clock outputbuffer. The clock input buffer provides the buffered parallelcomplementary clock signals in response to the first logic state of themode selection signal, and provides a sensed clock signal correspondingto the serial complementary clock signals in response to the secondlogic state of the mode selection signal. The clock generator generatesthe complementary internal clock signals in response to either thebuffered parallel complementary clock signals when the mode selectionsignal is at the first logic state, or the sensed clock signal when themode selection signal is at the second logic state. The clock outputbuffer drives the complementary internal clock signals through clockoutput ports when the mode selection signal is at the second logicstate. The clock input buffer includes a comparator and a pair ofbuffers. The comparator is enabled in response to the mode selectionsignal at the second logic state for providing the sensed clock signalin response to the serial complementary clock signals. The pair ofbuffers are enabled in response to the mode selection signal at thesecond logic state for providing the buffered parallel complementaryclock signals in response to the parallel complementary clock signals.The clock output buffer includes a pair of drivers enabled in responseto the mode selection signal at the second logic state for driving thecomplementary internal clock signals through the clock output ports.

In a further embodiment, the clock generator includes a clocksynthesizer and a switch circuit. The clock synthesizer provides a firstclock signal and a second clock signal shifted 180 degrees relative tothe first clock signal, in response to the sensed clock signal. Theswitch circuit passes the first clock signal and the second clock signalas the complementary internal clock signals when the mode selectioncircuit is at the second logic state. The switch circuit passes thebuffered parallel complementary clock signals as the complementaryinternal clock signals when the mode selection circuit is at the secondlogic state. The clock synthesizer can be one of a phase locked loop anda delay locked loop. The clock synthesizer provides a third clock signaland a fourth clock signal, where the third clock signal is shifted 90degrees relative to the first clock signal and the fourth clock signalis shifted 180 degrees relative to the third clock signal. The clockgenerator further includes a phase selector circuit for selectivelypassing either the complementary internal clock signals or the third andfourth clock signals to the clock output buffer.

According to another embodiment, the configurable data input/outputbuffer includes a data input buffer for selectively providing input datacorresponding to either sensed data resulting from a comparison betweenthe data and the voltage level, or buffered data corresponding to thedata, in response to the mode selection signal. The data input bufferincludes a comparator and a buffer. The comparator is enabled when themode selection signal is at the second logic state for providing theinput data in response to the voltage level and a voltage of the data.The buffer is enabled when the mode selection signal is at the firstlogic state for providing the buffered data. The configurable datainput/output buffer can further include a data switch for selectivelypassing one of the input data and local read data to a data outputbuffer.

In a third aspect, the present invention provides a method forconfiguring a clock operating mode of a memory device that receives areference voltage for sensing input data. The method includes settingthe reference voltage level; comparing the reference voltage to a presetreference voltage for generating a mode selection signal correspondingto the reference voltage relative to the preset reference voltage; andconfiguring a clock input buffer to receive either parallelcomplementary clock signals or serial complementary clock signals inresponse to the mode selection signal. In embodiments of the presentaspect, the step of comparing includes latching the mode selectionsignal, and the step of comparing includes disabling a sense circuitused for comparing the reference voltage to the preset reference voltageafter a predetermined delay. The predetermined delay is determined bycounting 2̂n clock edges after deasserting a reset signal, and the presetreference voltage floats to a voltage supply while the reset signal isasserted.

In yet another embodiment of the present aspect, the step of configuringincludes enabling a comparator receiving serial complementary clocksignals and disabling buffers receiving parallel complementary clocksignals in response to a first logic state of the mode selection signal.The step of enabling includes enabling a clock synthesizer forgenerating a first clock signal and a second clock signal shifted 180degrees relative to the first clock signal, in response to a sensedclock signal from the comparator. The step of enabling a clocksynthesizer includes providing as internal clock signals one of thefirst clock signal and the second clock signal and buffered parallelcomplementary clock signals corresponding to the parallel complementaryclock signals, in response to the mode selection signal. The clocksynthesizer generates a third clock signal and a fourth clock signal,where the third clock signal is shifted 90 degrees relative to the firstclock signal and the fourth clock signal is shifted 180 degrees relativeto the third clock signal. The step of configuring includes selectivelypassing one of the internal clock signals and the third and fourth clocksignals in response to a phase selection signal.

In a fourth aspect, the present invention provides a memory systemconfigurable to operate with one of parallel clock signals and serialclock signals. The memory system includes a memory controller and atleast one serially connected memory device. The at least one memorydevice has clock input ports, a reference voltage input port, a modesetter, and a clock switch circuit. The clock input ports receive one ofthe parallel clock signals and the serial clock signals. The referencevoltage input port receives a reference voltage set to one of apredetermined voltage level and a voltage supply level. The mode settercompares the reference voltage to the predetermined voltage level, andgenerates a mode selection signal corresponding to a result of thecomparison. The clock switch circuit is coupled to the clock input portsfor generating complementary internal clock signals corresponding to oneof the parallel clock signals and the serial complementary clocksignals, in response to the mode selection signal.

A memory system that resolves many performance issues of the Flashmemory system 10 of FIG. 1 is a serially connected memory system inwhich the memory devices are serially connected with each other and thememory controller in a ring topology configuration. FIGS. 2A and 2B areblock diagrams illustrating the conceptual nature of a serial memorysystem. FIG. 2A is a block diagram of a serial memory system receiving aparallel clock signal while FIG. 2B is a block diagram of the sameserial memory system of FIG. 2A receiving a source synchronous clocksignal.

In FIG. 2A, the serial memory system 20 includes a memory controller 22having at least one serial channel output port Sout and a serial channelinput port Sin, and memory devices 24, 26, 28 and 30 that are connectedin series. Input and output ports correspond to physical pins orconnections interfacing the memory device to the system it is integratedwith. In one embodiment, the memory devices can be flash memory devices.Alternately, the memory devices can be DRAM, SRAM or any other type ofmemory device provided it has a serial input/output interface compatiblewith a specific command structure, for executing commands or for passingthrough commands and data to the next memory device. The current exampleof FIG. 2A includes four memory devices, but alternate embodiments caninclude a single memory device, or any number of memory devices.Accordingly, if memory device 24 is the first device of serial memorysystem 100 as it is connected to Sout, then memory device 30 is the Nthor last device as it is connected to Sin, where N is an integer numbergreater than zero. Memory devices 26 to 28 are then intervening seriallyconnected memory devices between the first and last memory devices. Eachmemory device can assume a distinct identification (ID) number, ordevice address (DA) upon power up initialization of the system, so thatthey are individually addressable. Commonly owned U.S. patentapplication Ser. No. 11/622,828 titled “APPARATUS AND METHOD FORPRODUCING IDS FOR INTERCONNECTED DEVICES OF MIXED TYPE”, U.S. patentapplication Ser. No. 11/750,649 titled “APPARATUS AND METHOD FORESTABLISHING DEVICE IDENTIFIERS FOR SERIALLY INTERCONNECTED DEVICES”,U.S. patent application Ser. No. 11/692,452 titled “APPARATUS AND METHODFOR PRODUCING DEVICE IDENTIFIERS FOR SERIALLY INTERCONNECTED DEVICES OFMIXED TYPE”, U.S. patent application Ser. No. 11/692,446 titled“APPARATUS AND METHOD FOR PRODUCING IDENTIFIERS REGARDLESS OF MIXEDDEVICE TYPE IN A SERIAL INTERCONNECTION”, U.S. patent application Ser.No. 11/692,326 titled “APPARATUS AND METHOD FOR IDENTIFYING DEVICE TYPEOF SERIALLY INTERCONNECTED DEVICES” and U.S. patent application Ser. No.11/771,023 titled “ADDRESS ASSIGNMENT AND TYPE RECOGNITION OF SERIALLYINTERCONNECTED MEMORY DEVICES OF MIXED TYPE” describe methods forgenerating device addresses for serially connected memory devices of amemory system, the contents of which are incorporated by reference inits entirety.

Memory devices 24 to 30 are considered serially connected because thedata input of one memory device is connected to the data output of aprevious memory device, thereby forming a series-connectionconfiguration, with the exception of the first and last memory devicesin the chain. The channel of memory controller 22 includes data,address, command, and control information provided by separate pins orthe same pins. For example, a data channel of any suitable data widthwill carry command, data and address information, while a controlchannel will carry control signal data. The embodiment of FIG. 2Aincludes one channel, where the one channel includes Sout andcorresponding Sin ports. However, memory controller 22 can include anynumber of channels for accommodating separate memory device chains. Inthe example of FIG. 2A, the memory controller 22 provides a clock signalCLK, which is connected in parallel to all the memory devices.

In general operation, the memory controller 22 issues a command throughits Sout port, which includes an operational code (op code), a deviceaddress, address information for reading or programming, and data forprogramming. The command is issued as a serial bitstream packet, wherethe packet can be logically subdivided into predetermined size segments,such as a byte for example. A bitstream is a sequence or series of bitsprovided over time. The command is received by the first memory device24, which compares the device address to its assigned address. If theaddresses match, then memory device 24 executes the command. Otherwise,the command is passed through its own output port to the next memorydevice 26, where the same procedure is repeated. Eventually, the memorydevice having the matching device address, referred to as a selectedmemory device, will execute the operation dictated by the command. Ifthe command is to read data, the selected memory device will output theread data through its output port, which is serially passed throughintervening memory devices until it reaches the Sin port of the memorycontroller 22. Since the commands and data are provided in a serialbitstream, the clock is used by each memory device for clocking in/outthe serial bits and for synchronizing internal memory device operations.This clock is used by all the memory devices in the serial memory system20.

The performance of serial memory system 20 is superior to that of theparallel memory system 10 shown in FIG. 10. The parallel distributedclock lines can provide a relatively relaxed clock frequency, therebyallowing memory system 20 to use low voltage CMOS unterminated fullswing signaling to provide robust data communication. This is alsoreferred to as LVTTL signaling. For example, assuming a 66 MHz clock isused and the serial memory system 20 includes four memory devices, thedata rate per pin of one of the serially connected memory devicesemploying double data rate (DDR) signaling will be about 133 Mbps.

Serial memory system 40 of FIG. 2B is similar to serial memory system 20of FIG. 2A, except that the clock signal CLK is provided serially toeach memory device from an alternate memory controller 42 configured forproviding the source synchronous clock signal CLK. Each memory device44, 46, 48 and 50 will be configured to receive and pass the sourcesynchronous clock CLK. In a practical implementation of serial memorysystem 40, the clock signal CLK is passed from one memory device toanother via short signal lines. Therefore none of the clock performanceissues related to the parallel clock distribution scheme are present,and CLK can operate at high frequencies. Accordingly, the serial memorysystem 40 can operate with greater speed than serial memory system 20 ofFIG. 2A. For example, high speed transceiver logic (HSTL) signaling canbe used to provide high performance data communication. In the HSTLsignaling format, each memory device will receive a reference voltagethat is used for determining a logic state of the incoming data signals.Another similar signaling format is the SSTL signaling format.Accordingly, the data and clock input circuits in the memory devices ofserial memory systems 20 and 40 will be configured differently from eachother.

While high speed serial memory systems are suitable for newer computingdevices, there may be existing computing systems that do not requirehigh speed operation, but can still benefit from the high memorycapacity of a serial memory system. For example, the serial memorysystem can be modular, as disclosed in commonly owned U.S. patentapplication Ser. No. 11/843,440, where additional memory devices can beadded to the memory system in order to expand the total memory capacity.On the other hand, it may not be cost effective to replace existingslower speed serial memory systems with the high speed memory systems.Therefore, both types of memory devices would have to be available forupgrading or assembling of both types of serial memory systems. However,persons skilled in the art will understand that it is not cost effectiveto manufacture two different types of memory devices, where one type isconfigured for interfacing with memory controller 22 while another typeis configured for interfacing with memory controller 42.

Therefore, a clock mode configuration circuit for a configurable memorydevice is provided for allowing the configurable memory device to beused in both a parallel clocked memory system and a serially clockedmemory system. Such a memory system includes any number of configurablememory devices serially connected to each other, where each configurablememory device receives a clock signal. The clock signal can be providedeither in parallel to all the configurable memory devices or seriallyfrom one memory device to another through the same clock input. Theclock mode configuration circuit in each configurable memory device isset to a parallel mode for receiving the parallel clock signal, and to aserial mode for receiving a source synchronous clock signal from a priormemory device or memory controller. Depending on the set operating mode,the data input circuits will be configured for a corresponding datasignal format, and the corresponding clock input circuits will be eitherenabled or disabled. The parallel mode and the serial mode is set bysensing a reference voltage level provided to each memory device.

FIGS. 3A and 3C are block diagrams of serial memory systems using thesame type of memory device that includes embodiments of the clock modeconfiguration circuit, the details of which will be described later. Thememory devices of the serial memory system of FIG. 3A receive the clockserially while the memory devices of the serial memory system of FIG. 3Creceive the clock in parallel. In the memory system embodiments of FIGS.3A and 3C, four memory devices are shown connected in series in a ringtopology configuration with the memory controller, however any number ofmemory devices can be included in either serial memory system. Theserial memory systems of FIGS. 3A and 3C illustrate that the same typeof memory device can be used for both a parallel clocked system and aserially source synchronous clocked system, provided the memory deviceshave the clock mode configuration circuit.

In FIG. 3A, serial memory system 100 includes a memory controller 102and four memory devices 104, 106, 108 and 110. The memory controller 102provides control signals in parallel to the memory devices. Theseinclude the chip enable signal CE# and the reset signal RST#. In oneexample use of CE#, the device is enabled when CE# is at the low logiclevel. Once the memory device starts a program or erase operation, CE#can be de-asserted, or driven to a high logic level. In one example useof RST#, the memory device is set to a reset mode when RST# is at thelow logic level. In the reset mode, the power is allowed to stabilizeand the device prepares itself for operation by initializing all finitestate machines and resetting any configuration and status registers totheir default states. The memory controller 102 includes clock outputports CKO# and CKO for providing complementary clock signals CK and CK#,and clock input ports CKI# and CKI for receiving the complementary clocksignals from the last memory device of the system. Each memory devicewill include a clock synthesizer, such as a DLL or a PLL for generatingphases of the received clocks. Certain phases will be used to center theclock edges within the input data valid window internally to ensurereliable operation. Each memory device has clock output ports CKO# andCKO for passing the complementary clock signals to the clock input portsof the next memory device, and clock input ports CKI and CKI# forreceiving the complementary clock signals from either the memorycontroller 102 or a previous memory device. The last memory device 110provides the clock signals back to the memory controller 102.

The channel of memory controller 102 includes a data channel consistingof data output port Qn and data input port Dn, and a control channelconsisting of a command strobe input CSI, a command strobe output CSO(echo of CSI), data strobe input DSI, and a data strobe output DSO (echoof DSI). Output port Qn and input port Dn can be one bit in width, or nbits in width where n is a non-zero integer, depending on the desiredconfiguration. For example, if n is 1 then one byte of data is receivedafter eight data latching edges of the clock. A data latching clock edgecan be a rising clock edge for example in single data rate (SDR)operation, or both rising and falling edges of the clock for example indouble data rate (DDR) operation. If n is 2 then one byte of data isreceived after four latching edges of the clock. If n is 4 then one byteof data is received after two latching edges of the clock. The memorydevice can be statically configured or dynamically configured for anywidth of Qn and Dn. Hence, in a configuration where n is greater than 1,the memory controller provides data in parallel bitstreams. CSI is usedfor latching command and write data appearing on the input port Dn, andhas a pulse duration corresponding to the length of the command datareceived. More specifically, the command and write data will have aduration measured by a number of clock cycles, and the pulse duration ofthe CSI signal will have a corresponding duration. DSI is used forenabling the output port Qn buffer to output read data, and has a pulseduration corresponding to the length of the read data being requested.

Since the present embodiment of FIG. 3A is intended for high speedoperation, a high speed signaling format, such as the HSTL signalingformat by example, will be used. Accordingly, a reference voltage VREFis provided to each memory device which is used by each memory device todetermine the logic level of the signals received at the Dn, CSI and DSIinput ports. The reference voltage VREF may be generated by anothercircuit on the printed circuit board, for example, and is set to apredetermined voltage level based on the voltage swing of the HSTLsignal. By example, VREF can be set to a mid-point voltage of themaximum voltage level of the HSTL signal. According to the presentembodiment, setting VREF to the aforementioned predetermined voltagelevel will set the clock mode configuration circuit in a first operatingmode in which the input circuits are set to receive HSTL input signalsand the appropriate internal clock circuits will be generated. The firstoperating mode can be referred to as a high speed operating mode.

In a practical implementation of the embodiment of FIG. 3A, each memorydevice is positioned on a printed circuit board such that the distanceand signal track between input and output ports is minimized.Alternately, the four memory devices can be implemented in a system inpackage module (SIP) which further minimizes signal track lengths. Thememory devices can also be implemented as multiple SIP modules. Memorycontroller 102 and memory devices 104 to 110 are serially connected toform a ring topology, meaning that the last memory device 110 providesits outputs back to the memory controller 102. As such, those skilled inthe art will understand that the distance between memory device 110 andmemory controller 102 is easily minimized.

FIG. 3B is a timing diagram showing the general timing relationshipbetween the input signals and output signals for each memory device inserial memory system 100 with some internal signals shown as well. Inthis diagram internal gate delays are assumed to be minimal, although inan actual system significant delays can be accommodated and will notaffect functionality. Signal traces for received input clocks CKI andCKI#, input data Dn, output clocks CKO and CKO#, and output data Qn areshown in FIG. 3B, as are internally generated 90, 180, 270 and 360degree phases of the received input clocks. Since each memory deviceoperates at the double data rate, received data is buffered into aninternal single data rate even data stream D_E and an internal singledata rate odd data stream D_O. In the example of FIG. 3B, data “A”, “B”,“C”, “D” and “E” are provided serially on the Dn input of the memorydevice, where each has a data input valid window corresponding to arising and falling edge of CKI or CKI#. In other words, the input dataand the clock edges are coincident with each other. Data “A”, “C” and“E” are latched on each rising edge of the internal 90 degree clock andprovided on the D_E data stream. Data “B” and “D” are latched on eachrising edge of the internal 270 degree clock and provided on the D_Odata stream. Assuming that the received input data on Dn is simplypassed through to its Qn output, the double data rate output data Qn isgenerated from the even D_E data latched on each rising edge of the 270degree clock output and the odd D_O data latched on each rising edge ofthe 90 degree clock output. As shown in FIG. 3B, CKO corresponds to the270 degree clock output while CKO# corresponds to the 90 degree clockoutput.

In the presently shown embodiment of FIG. 3C, each memory device has thesame serial input/output interface, which includes RST#, CE#, CKI# andCKI input ports for receiving the corresponding signals from the memorycontroller 202. The serial input/output interface further includes adata input port Dn, a data output port Qn, CSI, DSI, CSO and DSO ports.As shown in FIG. 3C, the Dn, CSI and DSI input ports for each memorydevice are connected to the Qn, CSO and DSO output ports respectively,of a previous memory device. Accordingly, the memory devices areconsidered serially connected to each other as each can pass command andread data to the next memory device in the chain.

In FIG. 3C, serial memory system 200 includes a memory controller 202and the same memory devices 104, 106, 108 and 110 of FIG. 3A. The memorycontroller 202 will be configured to provide the same functionality asmemory controller 102 of FIG. 3A except that the clock signals areprovided in parallel, therefore the clock output ports CKO# and CKO ofeach memory device are unconnected. Furthermore, the signaling formatfor the data and the strobe signals will be different, such as the fullswing un-terminated LVTTL signaling format by example. At lower clockfrequencies, the LVTTL signaling format does not require the use ofreference voltage VREF, thus VREF can be set to a voltage level otherthan the predetermined level used in the embodiment of FIG. 3A. Forexample, VREF can be set to either VDD or VSS. According to the presentembodiment, setting VREF to VSS or some voltage other than theaforementioned predetermined voltage level will set the clock modeconfiguration circuit in a second operating mode in which the inputcircuits are set to receive LVTTL input signals and the appropriateinternal clock circuits will be generated. The second operating mode canbe referred to as a low speed operating mode. Accordingly, an advantageof using the existing VREF input of the memory devices to set theoperating mode of the clock mode configuration circuit is that noadditional pin and corresponding logic in the memory controllers isrequired for configuring the memory devices. Each memory deviceself-configures based on the voltage level of VREF, thereby reducing anydesign overhead in the memory controller. Furthermore, the same clockinput ports CKI and CKI# can receive either the parallel clock signalsor the serial clock signals, which minimizes the pin count of the memorydevice.

FIG. 3D is a timing diagram showing the general timing relationshipbetween the input signals and output signals for each memory device inserial memory system 200 with some internal signals shown as well. Inthis diagram internal gate delays are assumed to be minimal, although inan actual system significant delays can be accommodated and will notaffect functionality. Signal traces for received input clocks CKI andCKI#, input data Dn and output data Qn are shown in FIG. 3B. The memorydevices do not have an internal clock synthesizer, and no output clocksCKO and CKO# are provided. Each memory device operates at the doubledata rate, hence received data is buffered into a single data rate evendata stream D_E and a single data rate odd data stream D_O. In theexample of FIG. 3D, data “A”, “B”, “C”, “D” and “E” are providedserially on the Dn input of the memory device, and the rising andfalling edges of CKI and CKI# are centered within each data input validwindow. In the present example, internal read data “Ci” and “Di” will beprovided to the output circuits of the memory device via RD_E and RD_O,in response to a read command received by the memory device.Accordingly, there is an even output data stream Q_E and an odd outputdata stream Q_O that will provide either the internal read data fromRD_E and RD_O or external data from the D_E and D_O on the Qn output.More specifically, data from RD_E and RD_O will be provided on Q_E andQ_O in response to enable signals EN_E and EN_O at the high logic level.

Data “A”, “C” and “E” are latched on each rising edge of CKI andprovided on the D_E data stream. Data “B” and “D” are latched on eachrising edge of CKI# and provided on the D_O data stream. While EN_E andEN_O are at the inactive low logic level, data “A” and “B” will belatched on the rising edges of CKI and CKI# and provided on D_E and D_Orespectively. On the rising edge of CKI#, data “A” on D_E is latched andprovided on Q_E, while data “B” on D_O is latched on the rising edge ofCK and provided on Q_O. Data “A” and “B” are then provided on the Qnoutput on the rising edges of CKI# and CKI respectively. When EN_E ishigh, data “Ci” on RD_E is latched and provided on Q_E on the risingedge of CKI#. Subsequently, while EN_O is high, data “Di” on RD_O islatched and provided on Q_O on the rising edge of CKI. Data “Ci” and“Di” are then provided on the Qn output on the rising edges of CKI# andCKI respectively. When EN_E and EN_O fall to the low logic level,external data “E” will be latched onto Q_E and passed onto Qn. Delaythrough the output path of the device, the interconnection to thefollowing device, and the input path of the following device will shiftthe Qn data stream so that the rising edge of CKI in the followingdevice falls within the received Dn data stream bits A, Ci, and E, andthe rising edge of CKI# in the following device falls within thereceived Dn data stream bits B and Di. Persons skilled in the art willensure that the delay path from serial output Qn to serial input Dn isless than half a clock period.

According to an example embodiment, memory devices 104, 106, 108 and 110can be any type of memory device having a serial input/output interfacedesigned for serial interconnection with other memory devices. Whilememory devices 104, 106, 108 and 110 can be implemented as Flash memorydevices, they can also be implemented as DRAM, SRAM or any othersuitable type of volatile or non-volatile memory device. Morespecifically, other memory types can be adapted to operate with theserial input/output interface and configured to receive LVTTL inputsignals or HSTL input signals.

FIG. 4 is a block diagram illustrating the conceptual organization of ageneric memory device having a native core and a serial input/outputinterface suitable for use in the serial memory systems of FIGS. 3A and3C. Memory device 300 includes a native memory core, which includesmemory array banks 302 and 304, and native control and I/O circuits 306for accessing the memory array banks 302 and 304. Those skilled in theart will understand that the memory array can be organized as a singlememory bank or more than two memory banks. The native memory core can beDRAM, SRAM, NAND flash, or NOR flash memory based for example. Ofcourse, any suitable emerging memory and its corresponding controlcircuits can be used. Accordingly, depending on the type of nativememory core, circuit block 306 can include error correction logic, highvoltage generators, refresh logic and any other circuit blocks that arerequired for executing the operations native to the memory type.

Typically, memory devices use command decoders for initializing therelevant circuits in response to a received command by assertinginternal control signals. They will also include well known I/Ocircuitry for receiving and latching data, commands and addresses.According to the present embodiment, the existing I/O circuits arereplaced with the serial interface and control logic block 308. In thepresent example, the serial interface and control logic block 308receives RST#, CE#, CK#, CK, CSI, DSI and Dn inputs, and provides Qn,CSO, DSO, CKO and CKO# outputs.

The serial interface and control logic block 308 is responsible forvarious functions, as discussed in U.S. patent application Ser. No.11/324,023. Example functions of serial interface and control logicblock 308 include setting a device identifier number, passing datathrough to the next serially connected memory device, and decoding areceived command for executing native operations. This circuit will beconfigured to receive commands serially, and will be configured toinclude additional commands specific to serial operation of the memorydevice, in addition to existing native commands specific for controllingcore circuits. The command set can be expanded to execute featuresusable by the memory controller when the memory devices are seriallyconnected. For example, status register information can be requested toassess the status of the memory device.

Therefore, the serial memory systems of FIGS. 3A and 3C can include amix of memory device types, each providing different advantages for thegreater system. Such a configuration having memory devices of mixedtypes is disclosed in U.S. Provisional Patent Application No. 60/868,773filed Dec. 6, 2006, the disclosure of which is incorporated herein byreference in its entirety. Further details are such configurations aredisclosed in U.S. patent application Ser. No. 11/771,023 titled “ADDRESSASSIGNMENT AND TYPE RECOGNITION OF SERIALLY INTERCONNECTED MEMORYDEVICES OF MIXED TYPE”, and in U.S. patent application Ser. No.11/771,241 titled “SYSTEM AND METHOD OF OPERATING MEMORY DEVICES OFMIXED TYPE”. For example, the high speed of DRAM memory can be used forcaching operations while the non-volatility of flash memory can be usedfor low power mass data storage. Regardless of the type of memory devicebeing used, each memory device is individually addressable to act upon acommand because the serial interface and control logic block 306 isconfigured to receive commands according to a predetermined protocol.According to one embodiment, the previously discussed clock modeconfiguration circuit is implemented in the serial interface and controllogic block 308.

FIG. 5 is a block diagram illustrating a clock mode configurationcircuit according to one embodiment, which generates signals to be usedby an embodiment of a configurable input/output buffer. Both the clockmode configuration circuit and the configurable input buffer can be usedin the previously described serial interface and control logic block308. The clock mode configuration circuit includes a mode setter 400 anda clock switch circuit 402. The mode setter 400 generates a mode signalMODE having either a high logic level or a low logic level in responseto a voltage level of a reference voltage VREF. As previously noted byexample, VREF is used by the memory device to determine the logic levelof high speed input signals, such as those using the HSTL signalingformat. In the present embodiment, VREF will be set to somepredetermined voltage level between the high and low voltage supplylevels, such as VDD/2 for HSTL signaling for example. If lower speedinput signals are to be used, such as those using the LVTTL signalingformat, then the VREF voltage is not required, and the VREF pin can beconnected to either supply voltage level (VDD or VSS). From this pointon, the HSTL and LVTTL signaling formats will be used to describe theoperation of the embodiments, and VREF will be set to VSS when thememory device is to receive LVTTL signals. The clock switch circuit 402is responsible for enabling generation of internal clock signals basedon one of a parallel clock signal or a source synchronous serial clocksignal, in response to the mode signal MODE provided by the mode setter400. A further discussion of the components of the clock switch circuit402 will follow later.

The configurable input/output buffer of FIG. 5 is implemented as aconfigurable data input/output buffer 404 that will sense HSTL or LVTTLinput signals and pass either the received input signals or internaldata from the memory device, to the output port Qn. The configurabledata input/output buffer 404 will use the internally generated clocksignals provided by clock switch circuit 402 in order to maintainsynchronous operation in accordance with the selected input signalingformat. While only one configurable input/output buffer is shown in FIG.5, persons of skill in the art will understand that there is oneconfigurable input/output buffer for input signals DSI and CSI as well.

In the present example embodiments, VREF at the predetermined voltagelevel, typically VDD/2, will correspond to a serial clock mode ofoperation, while VREF at the VSS voltage level will correspond to aparallel clock mode of operation. This means that during assembly of thememory system, if each memory device receives the clock signal in seriesas in FIG. 3A, then VREF will be set to the predetermined voltage level.Accordingly, the HSTL signaling format will be used. On the other hand,if each memory device receives the clock signal in parallel as in FIG.3C, then VREF will be set to VSS. Then the LVTTL signaling format willbe used instead. Therefore, VREF is sensed by mode setter 400 to setsignal MODE to a first logic state corresponding to a serial clock modeof operation or to a second logic state corresponding to a parallelclock mode of operation.

Returning to the clock switch circuit 402 with this understanding of theMODE signal, clock switch circuit 402 includes a clock input buffer 406,a clock generator 408, and a clock output buffer 410. The clock inputbuffer 406 is connected to the clock input ports CK and CK#, andgenerates either a single ended clock signal based on two differentialclock inputs CK and CK#, or separate buffered versions of CK and CK# inresponse to the logic state of the mode signal MODE. For example, thesingle ended clock signal is generated when MODE is at the first logicstate. The clock generator 408 receives either the single ended clocksignal or the buffered versions of CK and CK# to provide two internalclock phases used for internal operation and generating the properoutput timing. The internal clock signals CKI and CKI# are distributedto the internal circuits of the memory device, and to the configurableinput/output buffers. The clock output buffer 410 receives the internalclock signals CKI and CKI#, and drives them through the CKO and CKO#output port when MODE is at the first logic state. When MODE is at thesecond logic state corresponding to a parallel mode of operation, theclock output buffer 410 is disabled since there is no need to providethe serial clock to the next memory device.

The configurable data input/output buffer 404 includes a data inputbuffer 412, a data switch 414, and a data output buffer 416. The datainput buffer 412 receives input data Dn and the reference voltage VREF,which is used when MODE is at the first logic level. A buffered inputsignal Din is then provided to the data switch 414, which passes eitherDin or native data from the memory device, to the data output buffer416. The native data in the present example includes even data RD_e andodd data RD_o, because data is provided on both the rising and fallingedge of the clock signal. Signals EN_o and EN_e are used to select Dinor both RD_e and RD_o to pass to the data output buffer 416.Furthermore, it is noted that the serial data of Dn is provided on boththe rising and falling edge of the clock signal. The selection of whichdata to pass will depend on the command received by the memory device.In either case, the data is synchronized to the internal clock signalsCKI and CKI# and passed to the data output buffer as even and odd dataDout_e and Dout_o respectively. The data output buffer 416 will theninterleave the Dout_e and Dout_o bits of data in response to the clockand drive it through the Qn data output port.

An advantage provided by the clock mode configuration circuit of FIG. 5is that no additional package pin is required because VREF is now usedfor two different purposes. If each memory device is individuallypackaged, then the package size is thereby minimized by reducing thenumber of pins that are required. Those skilled in the art willunderstand that smaller package sizes minimize required printed circuitboard area upon which the memory system is integrated upon. Alternately,the memory devices of the serial memory systems shown in FIGS. 3A and 3Ccan be packaged together as a system in package (SIP). Once again, areduced pin count will minimize the package size. The mode setter 400being connected to the VREF input port provides this advantage. Afurther advantage is that a single memory component can operatecorrectly in high performance source synchronous clockingconfigurations, and in lower performance parallel clockingconfigurations with reduced power consumption, as will be furtherexplained as follows.

FIG. 6 is a circuit schematic of the mode setter 400, according to oneembodiment. Mode setter 400 will sense the voltage level of VREF anddrive signal MODE to either a first logic level or a second logic level.In this particular example, the first and second logic levels cancorrespond to VDD and VSS respectively. Mode setter 400 includes a sensecircuit 500, a latch 502, and a digital delay circuit 504. The sensecircuit 500 includes resistor elements 506, 508, a power shut-off device510 connected in series between VDD and VSS, and a comparator 512. Inthe present embodiment, power shut-off device 510 is implemented as ann-channel transistor having a gate terminal receiving an enable signalEN. The shared terminal of resistor elements 506 and 508 is connected toone input of comparator 512, while a second input of comparator 512receives the reference voltage VREF. Resistor elements 506 ad 508 form areference voltage circuit. The ratio of resistor elements 506 and 508can be set depending on the value of VREF to be detected. For example,if the stable voltage level of VREF is to be VDD/2, then resistorelement 506 can be set to 3R while resistor element 508 can be set to R.Accordingly, the shared terminal “x” will be at approximately VDD/4. Thecomparator 512 can be implemented with any known circuit, and in thepresent example, includes an optional enable input for receiving theenable signal EN.

The latch 502 can be implemented with any known circuit, and in thepresent example optionally receives enable signal EN. When the latchenable input is high the signal appearing on the D input is provided atthe Q output. When the latch enable input transitions from high to low,the state of the D input is latched and provided to the output Q. Thedigital delay circuit 504 includes a counter 514, a NOR logic gate 516,and an inverter 518. The counter 514 is an n-bit counter, where n can beany integer number greater than 1, having only its most significant bitoutput (MSB) connected to the input of inverter 518. The counter isreset such that all bits, including the MSB output, are set to 0 (VSS)when RST# is at the low logic level. MSB is also connected to one inputof NOR logic gate 516, while its other input receives clock signal CK.Therefore, when reset, MSB is at VSS in the present example. When RST#is released by setting it to the high logic level, the counter ispermitted to increment the count with each rising or falling edge of theclock CK. When the MSB is toggled to 1 (VDD), then power shut-off device510 is turned off via inverter 518, the comparator 512 is turned off tosave power, the MODE output is latched, and the clock input of thecounter 514 is disabled via the NOR gate to freeze the counter 514.After the delay provided by the counter, MODE will be stably set toeither VDD or VSS.

The operation of mode setter 400 is now described with reference to thesequence diagram of FIG. 7. At time t1, RST# is at VDD, which results incounter 514 driving MSB to VDD. EN is then driven to VSS by inverter518, which turns off power shut-off device 510 to allow node “x” tofloat to VDD. The advantage of having node “x” float to VDD while thecircuit is disabled is that regardless of the value of VREF, MODE willimmediately default to VSS when comparator 512 and latch 502 areenabled, because node “x” will always be greater than VREF. Thisimmediately sets the memory device to the parallel clock mode ofoperation so that normal memory operations can begin without delay. Attime t2, RST# is pulsed to VSS to reset MSB to VSS. RST# returning highreleases counter 514 to count a predetermined number of edges of clocksignal CK to allow the analog portions of the circuit sufficient time tosettle and properly determine the level on the VREF pin, even if theRST# low level pulse is short. When MSB drops to VSS, EN is driven toVDD by inverter 518 to enable the resistor divider, comparator 512, andlatch 502 to evaluate the level on the VREF pin and determine the MODEof operation. Because node “x” is currently floating at VDD, the enabledcomparator 512 will drive a low logic output which is then passedthrough latch 502 for setting MODE to the low logic level.

In the present example, it is assumed that VREF is configured to beapproximately VDD/2, and the ratio of resistor elements 506/508 is 3R/R.While the circuit is enabled, the voltage at node “x” will thereforesettle to a level of approximately VDD/4. Eventually, the voltage onnode “x” will be established at a steady VDD/4 level as shown in FIG. 7at time t3. If VREF is set to VSS, then no change will occur incomparator 512 to keep MODE at VSS. On the other hand, if VREF is set toVDD/2, comparator 512 will then drive its output to VDD which causeslatch 502 to drive MODE to VDD around time t3. Eventually, counter 514will set MSB to VDD at time t4 to drive EN to VSS. MSB at VDD will causeNOR logic gate 516 to output a low logic level signal to effectivelyterminate counting by counter 514, thereby “freezing” the counter 514.Once EN drops to VSS, power shut-off device 510 is turned off and node“x” will eventually float to VDD. However, EN at VSS will now disablecomparator 512, and latch 502 is prevented from latching any changingoutput signal on its D input. Therefore, power is saved by turning offsense circuit 500. In the source synchronous mode of operation, normalmemory operations can begin only after PLL or DLL synchronization. Thistime is not wasted since the voltage at node “x” will settle to thecorrect value during this synchronization period.

Therefore, the time delay corresponding to the time for counter 514 totoggle MSB to VDD will be sufficiently long to ensure that node “x” andVREF have stabilized for sensing by comparator 512. By example only, a 1ms time delay may be a sufficient time delay provided by digital delaycircuit 504. Hence by turning off power shut-off device 510 after MSB istoggled to VDD, the current path from VDD through the resistor elements506 and 508 to VSS is cut off, thereby conserving power during operationof the memory device. This time delay can be selected based on the clockfrequency being applied and the number of bits in the counter 514.

FIG. 8A is a schematic embodiment of the clock switch circuit 402 andthe configurable data input/output buffer 404 of FIG. 5. Both circuitscan be referred to as a configurable input circuit, since one receivesan input clock and the other receives input data from at least one inputdata port. The clock switch circuit 402 is configurable to operate inthe parallel or serial clock modes in response to a logic state of themode signal MODE, while the configurable data input/output buffer 404 isconfigurable to receive input data in either the HSTL or LVTTL signalingformat in response to the logic state of MODE. It is noted that this Dninput can receive both write data and commands from a memory controller.In order to simplify the circuit schematic of FIG. 8A, the command datapath and the input write data path are not shown. The same numberedreference numbers appearing in FIG. 8A have been generally described inFIG. 5.

The details of the clock switch circuit 402 now follows. The clock inputbuffer 406 includes a comparator 700 for receiving complementary clocksignals from clock input ports CKI and CKI#, a first buffer circuit 702receiving a clock signal from clock input port CKI and a second buffercircuit 704 receiving a complementary clock signal from clock input portCKI#. Comparator 700 is enabled by one state of MODE while the first andsecond buffers 702 and 704 are both enabled by an opposite state ofMODE. Thus, only one of the comparator 700 and the buffers 702 and 704will be active for any single logic state of MODE. However, the outputsof comparator 700 and buffers 702 and 704 are coupled to clock generator408 in parallel. For the presently described example where mode setter400 sets MODE to the first logic state corresponding to the serial clockmode of operation and to a second logic state corresponding to theparallel clock mode of operation, MODE at the first logic state willenable comparator 700. Accordingly, MODE at the second logic state willenable first and second buffers 702 and 704.

Clock generator 408 includes a phase locked loop (PLL) circuit 706 thatis enabled when MODE is at the first logic state. When enabled, PLLcircuit 706 will generate clock outputs shifted by 90, 180, 270 and 360degrees relative to the clock signal received at its REF input, which isconnected to the output of comparator 700. These shifted clock outputsare provided from the terminals labeled 90, 180, 270 and 360. In theserial clock mode of operation, received input clock transitions andreceived input data transitions are coincident. The PLL circuit 706 isused to place the edges of the internal clock signals within the inputdata valid window, for reliable data capture. A feedback input FBreceives the 360 degree shifted clock output to facilitate locking ofthe clock signals. Those skilled in the art should be familiar with PLLcircuit operation, and that the clock will be locked after several clockcycles to ensure stable operation. Instead of a PLL, a delayed lock loop(DLL) circuit can be used in place of the PLL circuit 706. A PLL and aDLL are both examples of clock synthesizers which can be used in thedisclosed embodiments. The 90 and 270 degree clock outputs are providedto first inputs of 2-1 multiplexors 708 and 710, both being controlledby MODE. The second inputs of multiplexors 708 and 710 receive theoutputs of buffers 702 and 704 respectively. In the parallel clock modeof operation, the received input clock transitions will be within theinput data valid window so that no phase shifted clocks are required.Therefore, multiplexors 708 and 710 collectively form a switch circuitfor selectively passing one of the 90 and 270 degree clock outputs fromPLL circuit 706 and the buffered clock signals from buffers 702 and 704in response to MODE. In the present example when MODE is at the firstlogic level, PLL circuit 706 is enabled and multiplexors 708 and 710will be controlled to pass the 90 and 270 degree clock outputs asinternal clock signals CK and CK#. On the other hand, when MODE is atthe second logic level, PLL circuit 706 is disabled and multiplexors 708and 710 will be controlled to pass the clock signals from buffers 702and 704 as the internal clock signals CK and CK#. Accordingly, turningoff the PLL that is not being used will reduce power consumption.

While not explicitly shown in FIG. 8A, complementary internal clocksignals CK and CK# are distributed to other circuits within the memorydevice. An optional feature of clock generator 408 is the phase selectorcircuit that includes multiplexors 712 and 714. First inputs ofmultiplexors 712 and 714 receives the internal clock signals CK# and CKrespectively, while second inputs receive the 360 and 180 degree clockoutputs from PLL circuit 706. Both multiplexors 712 and 714 arecontrolled by signal PHASE, which is provided by the command decoder ofthe memory device. The purpose of the phase selector circuit is tocentre the output clock signals provided on output ports CKO and CKO#with the output data provided on the output port Qn. In a seriallyconnected memory system, this feature is enabled in the last memorydevice of the system. The advantage is that the memory controller designcan be simplified as it will not require a PLL or DLL to reliablyreceive the data from the last memory device in the ring. Furtherdetails of the application of this feature in a memory system will bedescribed later. The clock output buffer 410 includes a pair of drivers716 and 718 for driving the clock signals provided by multiplexors 712and 714 onto output ports CKO and CKO#. Both drivers 716 and 718 areenabled by MODE, when it is at the first logic level representing theserial clock mode for example.

Therefore, in response to MODE, clock switch circuit 402 is configuredto generate internal clock signals corresponding to a serially providedsource synchronous clock signal or to a parallel clock signal. Becausethe memory devices will operate at high speeds in response to a highspeed source synchronous clock signal, this mode can be referred to as ahigh speed mode of operation. On the other hand, because the parallelclock signals will be at a lower frequency than the source synchronousclock, the other mode can be referred to as a low power mode ofoperation since circuits such as the comparator 700, PLL 706, anddrivers 716 and 718 will be turned off, and the lower frequencyoperation reduces overall power consumption relative to when the memorydevice operates at high frequencies. In either mode of operation, theinternal clock signals CK and CK# will be generated for use by othercircuits of the memory device, such as the configurable datainput/output buffer consisting of data input buffer 412, data switch 414and data output buffer 416.

The data input buffer 412 includes a comparator 720, a buffer circuit722 and a data input selector 724, where the data input selector 724 isimplemented as a 2-1 multiplexor. Comparator 720 has one input connectedto input port Dn, and a second input connected to the reference voltageinput port VREF. The buffer circuit 722 is also connected to input portDn. Comparator 720 generates a logic output corresponding to the voltagelevel of Dn relative to VREF, while buffer circuit 722 drives a logiclevel corresponding to what it receives. All three circuits arecontrolled by MODE, and in the presently described example where MODEbeing at the first logic level corresponds to a high speed mode ofoperation, comparator 720 is enabled, buffer 722 is disabled, and datainput selector 724 is controlled to pass the output of comparator 720.The output of data input selector 724 is referred to as Din.

Since the memory devices of the present embodiments are to be seriallyconnected to each other, external data arriving at the Dn input port canbe selectively passed through a memory device to the designated, oraddressed, memory device. However, each memory device can also providelocal read data that is to be passed on to the memory controller throughany intervening memory devices. The purpose of data switch 414 is toselectively pass either external Dn data or local read data to theoutput port Qn. The data switch 414 includes external data input latches726 and 728, data output selectors 730 and 732, and output latches 734and 736. In the present embodiment, data is latched on both edges of theinternal clock CK. Therefore, latches 726 and 728 receive CK and CK#respectively. Data output selector 730 passes one of latched externaldata from data input latch 726 or local even read data RD_e in responseto select signal EN_e. Similarly, data output selector 732 passes one oflatched external data from data input latch 728 or local odd read dataRD_o in response to select signal EN_o. Select signals EN_e and EN_o areprovided by the command decoder of the memory device.

The data output latches 734 and 736 latch the outputs of outputselectors 730 and 732 in response to active edges of the internal clocksignals CK# and CK respectively. The operation of the data switch 414 iswell understood by those of skill in the art familiar with double datarate operation. The data output buffer 416 includes a data outputselector 738 implemented as a 2-1 multiplexor, and a driver 740. Dataoutput selector 738 alternately passes the outputs of data outputlatches 734 and 736 in response to CK, which is then provided ontooutput port Qn by driver 740. In summary, when MODE is set, the datainput buffer 412 is automatically configured to receive a correspondingdata signal format, and the appropriate internal clock signals areautomatically generated by clock switch circuit 402 for use by dataswitch 414 and data output buffer 416.

Therefore, the same memory devices connected in series in a ringtopology with a memory controller can be configured to receive either aparallel clock or a source synchronous clock in series in response to areference voltage that is used for sensing data signal voltage levels,as shown in FIGS. 3A and 3C. Furthermore, data input circuits areautomatically configured to receive data signals having a signalingformat that corresponds with the parallel clock and the sourcesynchronous clock. Although not shown, the output buffer drive strengthcan also be configured based on the MODE setting, to optimizeperformance and power in the multi-drop bus and point-to-point ringtopologies.

As previously discussed, each memory device can include the optionalphase selector circuit that includes multiplexors 712 and 714 shown inFIG. 8A. In use with the memory system of FIG. 3A for example, only thelast memory device 110 will have PHASE set to a logic level for passingthe 180 and 360 degree clock outputs from PLL 706. For example, allmemory devices except the last memory device in the ring will output the90 and 270 degree clocks, which are the same clocks used to generateoutput data transitions. Therefore, output clock edges and output dataedges are co-incident and fully compatible with the input samplingstages of the next memory device. If the controller does not have a PLLor DLL to shift the input clock edges to the middle of the input datavalid window, the PHASE bit can be set to provide output clocktransitions already positioned in the middle of the data valid window,so that the controller can sample received data directly with thereceived clock signal. In the present examples, these would be the 180and 360 degree degree clock outputs. Signal PHASE can be set by loadinga single bit register from a command received by the memory device. Thiswould be set during a power up sequence of the memory system, whichwould start with the memory controller 202 executing an algorithm forassigning addresses to each memory device. Such algorithms can includethe ones disclosed in the previously mentioned commonly owned U.S.patent applications which are directed to generating ID numbers formemory devices in the memory system.

During ID number assignment, all memory devices will have the PHASE bitset to output co-incident clock and data edges. In the presentembodiments for example, this can correspond to a default state of PHASEin which the 90 and 180 degree clocks are output. If the memorycontroller does not have a PLL or DLL, then it will not be able toproperly receive data until PHASE of the last memory device has beenproperly programmed. However, since devices will not output any datatransitions at all until their device addresses have been assigned, thememory controller will recognize transitions on its data input as anindication that the last memory device has been programmed with a deviceaddress. Once the last memory device in the system is known by thememory controller, a command is issued to set the aforementioned singlebit register that changes the default state of PHASE to one for passingthe 180 and 360 degree clock outputs. After this setting has takeneffect full communication around the ring can occur.

FIG. 8B is a timing diagram showing the operation of the circuits ofFIG. 8A. In particular, the timing diagram of FIG. 8B shows theinternally generated clock signals in response to different settings ofMODE and PHASE during a continuous sequence of CKI and CKI# clocktransitions. At the same time, hypothetical data on the Qn output portis shown to contrast timing differences relative to the output datavalid windows in response to different logic levels of MODE and PHASE.This timing diagram is merely illustrative of the behaviour of thecircuits of FIG. 8A. Those skilled in the art will understand that datawould not be provided proximate to transitions of MODE and PHASE duringactual use. Dynamic transitions of MODE and PHASE would be done duringan initialization or reset period of the memory system. FIG. 8B includessignal traces for MODE, PHASE, CKI and CKI#, the internally generated90, 180, 270 and 360 degree clock signals from the clock synthesizer, CKand CK# and CKO and CKO#.

In the time period between time t1 and t2, the circuit is operating inthe parallel clock mode when MODE is at a low logic level. Because MODEis at the low logic level, PLL circuit 706 is turned off resulting inits 90, 180, 270 and 360 clock outputs being set to the low logic level.The internal clocks CK and CK# are therefore buffered versions of CKIand CKI# respectively. Using the circuits shown in FIG. 8A, the datatransfer operation between the input Dn (not shown) and Qn will followthe same sequence as shown in FIG. 3D, except that the latchingoperations are now responsive to CK and CK# instead of directly to CKIand CKI#. With MODE at the low logic level, the clock output buffer 410is disabled to keep CKO and CKO# at the low logic level.

In the time period between time t2 and t4, the circuit is operating inthe serial clock mode when MODE is at a high logic level. Because MODEis at the high logic level, PLL circuit 706 is turned on to generate the90, 180, 270 and 360 clock outputs. The current timing diagram assumesthat mode reset and PLL locking is immediate. With MODE at the highlogic level, internal clocks CK and CK# will correspond to the 90 and270 degree clock outputs, and the clock output buffer 410 is enabled todrive CKO and CKO# with the CK and CK# clocks. Using the circuits shownin FIG. 8A, the data transfer operation between the input Dn (not shown)and Qn will follow the same sequence as shown in FIG. 3B, except thatthe latching operations are now responsive to CK and CK# instead ofdirectly to the 90 and 270 degree clock outputs.

At time t3 PHASE is at the high logic level, but in actual use PHASE isset to either the high or low logic level before normal operations ofthe memory device. The transition shown in FIG. 8B merely contrasts therelationship between rising and falling edges of CKO and CKO# relativeto the output data of Qn between different logic levels of PHASE. WithPHASE set to the high logic level, multiplexors 712 and 714 will passthe 180 and 360 degree clock outputs to the clock output buffer 410.Accordingly, CKO and CKO# will correspond to the 180 and 360 degreeclock outputs, thereby centering the clock edges within the data validwindows.

The system embodiments of FIGS. 3A and 3C are static, meaning that oncemanufactured or assembled for use, they cannot be changed. According toanother embodiment, the memory system can be dynamically changed suchthat the memory devices receive either a parallel clock or a sourcesynchronous clock in series. FIG. 9 is a an embodiment of a dynamicallyconfigurable serial memory system where the memory controller providesboth parallel and source synchronous clocks, and data signals insignaling formats corresponding to the type of clocks. The memorydevices will include the same circuits shown in FIG. 8A, with a minormodification to receive both parallel and source synchronous clocksignals.

In FIG. 9, configurable serial memory system 800 includes a memorycontroller 802, and four dynamically clock configurable memory devices804, 806, 808 and 810. Memory controller 802 provides the same controland data signals as memory controller 102 or 202, but now providesparallel complementary clocks through clock output ports CK1 and CK1#,and complementary source synchronous clocks through clock output portsCK2 and CK2#. Memory controller 802 is further configured to dynamicallyprovide data and the strobe signals through its Qn, CSO and DSO outputports in one signaling format corresponding to the parallel clock, andanother signaling format corresponding to the source synchronous clock.For example, LVTTL signaling can be used with the parallel clock whileHSTL signaling can be used with the source synchronous clock. Memorycontroller 802 further includes serial clock input ports CKI and CKI#for receiving the source synchronous clocks from the last memory device.Each memory device is similarly configured to the memory devices shownin FIGS. 3A and 3C, except that each now includes a parallel input clockports CK1 and CK1# and serial input clock ports CKI and CKI#. Dependingon the level of VREF, each memory device will selectively use either theparallel clocks or the source synchronous clocks.

FIG. 10 is a schematic showing details of a clock switch circuit 402according to an alternate embodiment. This clock switch circuit shows amodification to the clock switch circuit shown in FIG. 8A, whereelements that are the same share the same reference numerals. The onlydifference over the embodiment of FIG. 8A is that clock input buffer 406now includes comparator 900, first buffer circuit 902 and second buffercircuit 904 that replace comparator 700, first buffer circuit 702 andsecond buffer circuit 704 of FIG. 8A. Comparator 900 has its inputsconnected to clock input ports CKI and CKI# that are dedicated toreceiving complementary source synchronous clock signals. The firstbuffer circuit 902 and second buffer circuit 904 are connected to clockinput ports CK1# and CK1 that are dedicated to receiving complementaryparallel clock signals. Now each memory device can be physicallyconnected to both parallel and source synchronous clocks at the sametime. The voltage level of VREF will then determine which of the clockinputs are to be used. In the memory system embodiment of FIGS. 9 and10, VREF can now be controlled by the memory controller, oralternatively by some suitable circuit separate from the memorycontroller that is controllable to drive VREF to the predeterminedvoltage level, or to either supply voltage. Therefore, the memory systemillustrated in FIGS. 9 and 10 can be dynamically switched to operatewith the source synchronous clocks for high speed operation, or with theparallel clocks if low power consumption operation is desired.

FIG. 11 is a flow chart summarizing the general algorithm executed byboth the memory controller and the memory devices of the memory systemsshown in FIGS. 3A, 3C and 9 for setting an operating mode. The methodbegins at step 1000 where the memory system is powered up, or reset byasserting the reset signal RST#. At step 1002 the memory controller willexecute start-up algorithms, such as an algorithm to assign device IDnumbers to each memory device in the memory system. At power up orreset, VREF will be set to a power supply voltage or to a predeterminedvoltage level. It should be understood to those skilled in the art thatother start-up algorithms can be executed by the memory controller andthe memory devices themselves. Each memory device will then sense thelevel of VREF at step 1004, via their respective clock input buffers,such as the clock input buffer 406 shown in FIG. 8A. The level of VREFis then determined at step 1006, and if it is not a reference voltage,then it should be either the VDD or VSS voltage supply, and MODE is setto a first logic level at step 1008. Otherwise, VREF is thepredetermined reference voltage level and MODE is set to a second logiclevel at step 1010.

Once MODE has been set, then all the memory devices will automaticallyconfigure their clock switch circuits and configurable data input/outputbuffers, such as clock switch circuit 402 and configurable datainput/output buffer 404, in the manner previously described at step1012. Once the memory devices have been configured to receive clock anddata signals corresponding to MODE, then as an optional step, the memorycontroller can issue a command to switch PHASE of the last memory devicefrom a default value to an active level. With reference to FIG. 8A, thedefault value of PHASE at start-up or reset of the memory device can bea low logic level to pass CKI and CKI#, while an active value can be VDDfor passing the 180 and 360 degree clock outputs of PLL 706.

While the previously described embodiments are directed to serial memorydevices, they can be applied to any semiconductor device that operateswith a clock provided in parallel or in series.

In the preceding description, for purposes of explanation, numerousdetails are set forth in order to provide a thorough understanding ofthe embodiments of the invention. However, it will be apparent to oneskilled in the art that for any particular embodiment of the invention,not all described details are required in order to practice thatembodiment of the invention. In some instances, well-known electricalstructures and circuits are shown in block diagram form in order not toobscure the invention. For example, specific details are not provided asto whether the embodiments of the invention described herein areimplemented as a software routine, hardware circuit, firmware, or acombination thereof.

Certain adaptations and modifications of the described embodiments canbe made. Therefore, the above discussed embodiments are considered to beillustrative and not restrictive.

1. A semiconductor device for receiving a clock and input datacomprising: a configurable input circuit operable in a first mode forreceiving coincident edges of the clock and the input data, and forproviding shifted clock edges positioned within a data valid window forsampling the input data, the configurable input circuit being operablein a second mode for receiving non-coincident edges of the clock and theinput data for sampling the input data.
 2. The semiconductor device ofclaim 1, further including an input pin for providing a voltage to theconfigurable input circuit for setting the first mode and the secondmode.
 3. The semiconductor device of claim 2, wherein the input pinincludes a reference voltage pin set to one of low and high power supplylevels for setting the second mode and a reference voltage level forsetting the first mode.
 4. The semiconductor device of claim 3, whereinthe reference voltage level is between the low and high power supplylevels and used by the configurable input circuit to sense logic levelsof the input data.
 5. The semiconductor device of claim 1, wherein theconfigurable input circuit includes a clock synthesizer for providingthe shifted clock edges in response to the clock.
 6. The semiconductordevice of claim 5, wherein the clock synthesizer includes one of a delaylocked loop and a phase locked loop.
 7. The semiconductor device ofclaim 5, wherein the clock synthesizer is disabled in the second mode.8. The semiconductor device of claim 2, wherein the configurable inputcircuit includes a single ended input buffer coupled to a data input pinfor receiving the input data, the single ended input buffer beingenabled in the second mode and disabled in the first mode, and adifferential input buffer coupled to the data input pin for receivingthe input data, the differential input buffer being enabled in the firstmode for sensing logic levels of the input data relative to the voltage.9. A configurable memory device, comprising: a mode setter for sensing avoltage level of a reference voltage input port and for providing a modeselection signal corresponding to the sensed voltage level; a clockswitch coupled to a clock input port for receiving at least one ofparallel complementary clock signals and serial complementary clocksignals, the clock switch generating complementary internal clocksignals corresponding to one of the parallel complementary clock signalsin response to a first logic state of the mode selection signal and theserial complementary clock signals in response to a second logic stateof the mode selection signal; and, a configurable data input/outputbuffer coupled to a data input port and the reference voltage input portfor sensing data received on the data input port relative to the voltagelevel in response to the second logic state of the mode selectionsignal.
 10. The memory device of claim 9, wherein the mode setterincludes a sense circuit for comparing the voltage level to a presetreference voltage, and for providing a sense output corresponding to thevoltage level relative to the preset reference voltage, and, a latch forlatching the sense output and for providing the mode selection signalhaving one of the first logic state and the second logic state.
 11. Thememory device of claim 10, wherein the sense circuit includes areference voltage circuit for providing the preset reference voltage,and a comparator for providing the sense output in response to thevoltage level and the preset reference voltage.
 12. The memory device ofclaim 11, wherein the reference voltage circuit includes a voltagedivider coupled between VDD and VSS.
 13. The memory device of claim 12,further including a power shut-off device for cutting off currentthrough the voltage divider after a predetermined period of time. 14.The memory device of claim 13, wherein the mode setter includes a delaycircuit for turning off the power shut-off device after thepredetermined period of time when a reset signal is driven to aninactive logic state.
 15. The memory device of claim 14, wherein thedelay circuit includes an n-bit counter enabled when the reset signal isat the inactive logic state for driving a most significant bit to anactive logic state when 2̂n active edges of a clock signal are counted,where n is an integer value greater than 1, the delay circuit generatinga disable signal corresponding to the most significant bit being at theactive logic state for turning off the power shut-off device.
 16. Thememory device of claim 9, wherein the clock switch includes a clockinput buffer for providing the buffered parallel complementary clocksignals in response to the first logic state of the mode selectionsignal and for providing a sensed clock signal corresponding to theserial complementary clock signals in response to the second logic stateof the mode selection signal, a clock generator for generating thecomplementary internal clock signals in response to one of the bufferedparallel complementary clock signals when the mode selection signal isat the first logic state, and the sensed clock signal when the modeselection signal is at the second logic state, and a clock output bufferfor driving the complementary internal clock signals through clockoutput ports when the mode selection signal is at the second logicstate.
 17. The memory device of claim 16, wherein the clock input bufferincludes a comparator enabled in response to the mode selection signalat the second logic state for providing the sensed clock signal inresponse to the serial complementary clock signals, and a pair ofbuffers enabled in response to the mode selection signal at the secondlogic state for providing the buffered parallel complementary clocksignals in response to the parallel complementary clock signals.
 18. Thememory device of claim 16, wherein the clock generator includes a clocksynthesizer for providing a first clock signal and a second clock signalshifted 180 degrees relative to the first clock signal, in response tothe sensed clock signal, and a switch circuit for passing the firstclock signal and the second clock signal as the complementary internalclock signals when the mode selection circuit is at the second logicstate, the switch circuit passing the buffered parallel complementaryclock signals as the complementary internal clock signals when the modeselection circuit is at the second logic state.
 19. The memory device ofclaim 18, wherein the clock synthesizer includes one of a phase lockedloop and a delay locked loop.
 20. The memory device of claim 16, whereinthe clock output buffer includes a pair of drivers enabled in responseto the mode selection signal at the second logic state for driving thecomplementary internal clock signals through the clock output ports. 21.The memory device of claim 18, wherein the clock synthesizer provides athird clock signal and a fourth clock signal, where the third clocksignal is shifted 90 degrees relative to the first clock signal and thefourth clock signal is shifted 180 degrees relative to the third clocksignal.
 22. The memory device of claim 21, wherein the clock generatorfurther includes a phase selector circuit for selectively passing one ofthe complementary internal clock signals and the third and fourth clocksignals to the clock output buffer.
 23. The memory device of claim 9,wherein the configurable data input/output buffer includes a data inputbuffer for selectively providing input data corresponding to one ofsensed data resulting from a comparison between the data and the voltagelevel, and buffered data corresponding to the data, in response to themode selection signal.
 24. The memory device of claim 23, wherein thedata input buffer includes a comparator enabled when the mode selectionsignal is at the second logic state for providing the input data inresponse to the voltage level and a voltage of the data, and a bufferenabled when the mode selection signal is at the first logic state forproviding the buffered data.
 25. The memory device of claim 23, whereinthe configurable data input/output buffer further includes a data switchfor selectively passing one of the input data and local read data to adata output buffer.
 26. A method for configuring a clock operating modeof a memory device that receives a reference voltage for sensing inputdata, comprising: a) setting the reference voltage level; b) comparingthe reference voltage to a preset reference voltage for generating amode selection signal corresponding to the reference voltage relative tothe preset reference voltage; and c) configuring a clock input buffer toreceive one of parallel complementary clock signals and serialcomplementary clock signals in response to the mode selection signal.27. The method of claim 26, wherein comparing includes latching the modeselection signal.
 28. The method of claim 26, wherein comparing includesdisabling a sense circuit used for comparing the reference voltage tothe preset reference voltage after a predetermined delay.
 29. The methodof claim 28, wherein the predetermined delay is determined by counting2̂n clock edges after deasserting a reset signal.
 30. The method of claim29, wherein the preset reference voltage floats to a voltage supplywhile the reset signal is asserted.
 31. The method of claim 26, whereinconfiguring includes enabling a comparator receiving serialcomplementary clock signals and disabling buffers receiving parallelcomplementary clock signals in response to a first logic state of themode selection signal.
 32. The method of claim 31, wherein enablingincludes enabling a clock synthesizer for generating a first clocksignal and a second clock signal shifted 180 degrees relative to thefirst clock signal, in response to a sensed clock signal from thecomparator.
 33. The method of claim 32, wherein enabling the clocksynthesizer includes providing as internal clock signals one of thefirst clock signal and the second clock signal and buffered parallelcomplementary clock signals corresponding to the parallel complementaryclock signals, in response to the mode selection signal.
 34. The methodof claim 33, wherein the clock synthesizer generates a third clocksignal and a fourth clock signal, where the third clock signal isshifted 90 degrees relative to the first clock signal and the fourthclock signal is shifted 180 degrees relative to the third clock signal,and configuring includes selectively passing one of the internal clocksignals and the third and fourth clock signals in response to a phaseselection signal.